An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

[+] Author and Article Information
Gary W. Hunter, Philip G. Neudeck, Robert S. Okojie, Glenn M. Beheim, J. A. Powell

NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135

Liangyu Chen

OAI, Cleveland, OH 44142

J. Turbomach 125(4), 658-664 (Dec 01, 2003) (7 pages) doi:10.1115/1.1579508 History: Received February 28, 2002; Online December 01, 2003
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The response of a sensor array composed of a tin oxide based sensor (doped for NOx sensitivity), an oxygen sensor, and a SiC-based hydrocarbon sensor in an engine environment
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Prototype high-temperature electronic package composed of ceramic substrates and Au thick-film metallization for harsh environment systems
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Forward resistance of a packaged SiC Schottky diode at 500°C in an oxidizing environment for over 1000 h
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Optical Nomarski images of two adjacent 200 mm square mesas on a 4H-SiC wafer. Mesa A is step-free and mesa B contains a screw dislocation which provided a continuous source of steps during growth.
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(a) Pre-growth optical photo of cross-shaped mesa; (b) post-growth SEM image of “webbing” formed following 60-min growth
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Simplified (see text) cross-sectional representation of 6H-SiC epitaxial JFETs used to implement 600°C logic gates. The shaded regions are insulating silicon nitride dielectric.
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NAND gate test waveforms at 600°C with VDD=2.5 V,VSS=0 V,Vsubstrate=−1.4 V
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Optical micrograph of 6H-SiC JFET gate following 600°C electrical testing. Each bondpad is 100×100 μm2 , and each of the four gate fingers is 3×150 μm. Degradation of the bondpads is clearly evident.
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Scanning electron microscopy (SEM) micrograph of cavity etched in 6H-SiC by deep reactive ion etching method
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SEM micrograph of top view of a 6H-SiC pressure sensor cell with patterned metallization and four piezoresistors. The circular patterns are ohmic contact test structures.
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(a) Sub-assembled 6H-SiC sensor unit for insertion into the stainless steel screw housing; (b) fully packaged 6H-SiC pressure transducer with pressure port and pins visible
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Net bridge output voltage of 6H-SiC pressure sensor as function of pressure at various temperatures




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