0
TECHNICAL PAPERS

An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

[+] Author and Article Information
Gary W. Hunter, Philip G. Neudeck, Robert S. Okojie, Glenn M. Beheim, J. A. Powell

NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135

Liangyu Chen

OAI, Cleveland, OH 44142

J. Turbomach 125(4), 658-664 (Dec 01, 2003) (7 pages) doi:10.1115/1.1579508 History: Received February 28, 2002; Online December 01, 2003
Your Session has timed out. Please sign back in to continue.

References

Figures

Grahic Jump Location
The response of a sensor array composed of a tin oxide based sensor (doped for NOx sensitivity), an oxygen sensor, and a SiC-based hydrocarbon sensor in an engine environment
Grahic Jump Location
Prototype high-temperature electronic package composed of ceramic substrates and Au thick-film metallization for harsh environment systems
Grahic Jump Location
Forward resistance of a packaged SiC Schottky diode at 500°C in an oxidizing environment for over 1000 h
Grahic Jump Location
Optical Nomarski images of two adjacent 200 mm square mesas on a 4H-SiC wafer. Mesa A is step-free and mesa B contains a screw dislocation which provided a continuous source of steps during growth.
Grahic Jump Location
(a) Pre-growth optical photo of cross-shaped mesa; (b) post-growth SEM image of “webbing” formed following 60-min growth
Grahic Jump Location
Simplified (see text) cross-sectional representation of 6H-SiC epitaxial JFETs used to implement 600°C logic gates. The shaded regions are insulating silicon nitride dielectric.
Grahic Jump Location
NAND gate test waveforms at 600°C with VDD=2.5 V,VSS=0 V,Vsubstrate=−1.4 V
Grahic Jump Location
Optical micrograph of 6H-SiC JFET gate following 600°C electrical testing. Each bondpad is 100×100 μm2 , and each of the four gate fingers is 3×150 μm. Degradation of the bondpads is clearly evident.
Grahic Jump Location
Scanning electron microscopy (SEM) micrograph of cavity etched in 6H-SiC by deep reactive ion etching method
Grahic Jump Location
SEM micrograph of top view of a 6H-SiC pressure sensor cell with patterned metallization and four piezoresistors. The circular patterns are ohmic contact test structures.
Grahic Jump Location
(a) Sub-assembled 6H-SiC sensor unit for insertion into the stainless steel screw housing; (b) fully packaged 6H-SiC pressure transducer with pressure port and pins visible
Grahic Jump Location
Net bridge output voltage of 6H-SiC pressure sensor as function of pressure at various temperatures

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In