This paper investigates thermal transport on SiC formation and engulfment in directional solidification of crystalline Si. A comprehensive computational model is developed which is capable of describing fluid and thermal transport, SiC particle formation/transport, and its pushing-engulfment near the solidification interface. It is found that the impurity of carbon concentration in the melt is affected by melt convection; the concave interface leads to the carbon accumulation in the central region near the interface; the size of the SiC particle when engulfed into solid Si is mainly determined by the solidification rate. The distributions of carbon concentration and SiC particles are determined by both melt convection, interface shape and solidification rate. The low solidification rate is not desirable for high quality Si crystal growth when the solid/liquid interface is concave.

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