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Proceedings Papers

System and Component Level Risk Assessment for SiC MOSFET Based Inverter for Traction Application

Bakhtiyar Mohammad Nafis, Mohammad Mahmud, Zhongjing Wang, Yuheng Wu, David Huitink, Yue Zhao

Proc. ASME. InterPACK2020, ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, V001T07A007, October 27–29, 2020

Paper No: IPACK2020-2581

DOI: https://doi.org/10.1115/IPACK2020-2581

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Topics: MOSFET transistors, Risk assessment, Traction, Temperature, Failure, Reliability, Capacitors, Risk, Boundary-value problems, Cycles

Proceedings Papers

Multi-Scale Thermal Analysis for Design of SiC-Based Medium Voltage Motor Drive

J. Emily Cousineau, Kevin Bennion, Karun Potty, He Li, Risha Na, Longya Xu, Jin Wang

Proc. ASME. InterPACK2019, ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, V001T06A030, October 7–9, 2019

Paper No: IPACK2019-6631

DOI: https://doi.org/10.1115/IPACK2019-6631

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Topics: Design, Modeling, Motor drives, Porous materials, Thermal analysis, Computational fluid dynamics, Simulation, Boundary-value problems, Convection, Electronics

Proceedings Papers

Design, Analysis and Comparison of Insulated Metal Substrates for High Power Wide-Bandgap Power Modules

Emre Gurpinar, Burak Ozpineci, Shajjad Chowdhury

Proc. ASME. InterPACK2019, ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, V001T06A013, October 7–9, 2019

Paper No: IPACK2019-6436

DOI: https://doi.org/10.1115/IPACK2019-6436

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Topics: Design, Energy gap, Metals, Transients (Dynamics), Ceramics, Copper, Finite element analysis, Materials properties, MOSFET transistors, Semiconductors (Materials)

Proceedings Papers

3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging

Sayan Seal, Andrea K. Wallace, John E. Zumbro, H. Alan Mantooth

Proc. ASME. InterPACK2017, ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, V001T04A015, August 29–September 1, 2017

Paper No: IPACK2017-74213

DOI: https://doi.org/10.1115/IPACK2017-74213

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Topics: Packaging, Silicon, Wire, MOSFET transistors, Bonding, Electromagnetic interference, Electronics, Energy gap, Flip-chip, High temperature

Proceedings Papers

A Parametric Study of the Impact of Energy Relaxation Time on Thermal Behavior of Power Si MOSFET in Electro-Thermal Analysis

Risako Kibushi, Tomoyuki Hatakeyama, Shinji Nakagawa, Masaru Ishizuka

Proc. ASME. InterPACK2015, Volume 1: Thermal Management, V001T09A061, July 6–9, 2015

Paper No: IPACK2015-48802

DOI: https://doi.org/10.1115/IPACK2015-48802

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Topics: MOSFET transistors, Relaxation (Physics), Temperature distribution, Simulation, Electric fields, Thermal properties, Heat, Physics, Temperature

Proceedings Papers

Arcing and Spacing Requirements for High Voltage Printed Circuit Boards

Prabjit Singh

Proc. ASME. InterPACK2015, Volume 2: Advanced Electronics and Photonics, Packaging Materials and Processing; Advanced Electronics and Photonics: Packaging, Interconnect and Reliability; Fundamentals of Thermal and Fluid Transport in Nano, Micro, and Mini Scales, V002T02A011, July 6–9, 2015

Paper No: IPACK2015-48180

DOI: https://doi.org/10.1115/IPACK2015-48180

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Topics: Cellulosic fibers, Circuits, Coating processes, Coatings, Dust, Electric potential, Gates (Closures), Hardware, MOSFET transistors, Physics

Proceedings Papers

Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

Risako Kibushi, Tomoyuki Hatakeyama, Masaru Ishizuka

Proc. ASME. InterPACK2013, Volume 2: Thermal Management; Data Centers and Energy Efficient Electronic Systems, V002T08A049, July 16–18, 2013

Paper No: IPACK2013-73273

DOI: https://doi.org/10.1115/IPACK2013-73273

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Topics: Heat, MOSFET transistors, Electrons, Temperature, Thermal energy, Thermal properties, Crystal lattices, Density, Electric fields, Electronics

Proceedings Papers

Development of Plate Heat Pipes for the Thermal Management of Power Electronics

Yoshiyuki Abe, Akira Nakajima, Yoshihiko Maeda, Makoto Shimose

Proc. ASME. InterPACK2013, Volume 2: Thermal Management; Data Centers and Energy Efficient Electronic Systems, V002T08A017, July 16–18, 2013

Paper No: IPACK2013-73086

DOI: https://doi.org/10.1115/IPACK2013-73086

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Topics: Electronics, Heat pipes, Thermal management, MOSFET transistors, Cooling, Dimensions, Gates (Closures), Heat transfer, Thermal resistance, Transistors

Proceedings Papers

A Hierarchical Framework for Thermal Modelling of Electronic Devices: From Atoms to Chips

David A. Romero, Elham Pakseresht, Daniel Sellan, Aydin Nabovati, Cristina Amon

Proc. ASME. InterPACK2013, Volume 2: Thermal Management; Data Centers and Energy Efficient Electronic Systems, V002T08A043, July 16–18, 2013

Paper No: IPACK2013-73202

DOI: https://doi.org/10.1115/IPACK2013-73202

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Topics: Atoms, Modeling, Engineering simulation, Simulation, Thermal conductivity, Phonons, Physics, Silicon, Gates (Closures), Lattice Boltzmann methods

Proceedings Papers

Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density

Masaaki Koganemaru, Naohiro Tada, Toru Ikeda, Noriyuki Miyazaki

Proc. ASME. InterPACK2013, Volume 1: Advanced Packaging; Emerging Technologies; Modeling and Simulation; Multi-Physics Based Reliability; MEMS and NEMS; Materials and Processes, V001T05A013, July 16–18, 2013

Paper No: IPACK2013-73248

DOI: https://doi.org/10.1115/IPACK2013-73248

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Topics: Density, Simulation, Stress, Diffusion (Physics), Computer simulation, Electron mobility, Electrons, Heat conduction, Momentum, MOSFET transistors

Proceedings Papers

Thermal Characterization of a Single MOSFET Transistor at Cryogenic Temperatures

Xi Wang, Ali Shakouri

Proc. ASME. InterPACK2009, ASME 2009 InterPACK Conference, Volume 2, 293-296, July 19–23, 2009

Paper No: InterPACK2009-89084

DOI: https://doi.org/10.1115/InterPACK2009-89084

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Topics: MOSFET transistors, Temperature, Thermal characterization, Temperature distribution, Gates (Closures), Design, Electrons, Flow (Dynamics), Heat, Phonons

Proceedings Papers

Device Simulation of Mechanical Stress Effects on Electrical Characteristics of nMOSFETs: Impact of Local Stress in nMOSFETs

Masaaki Koganemaru, Keisuke Yoshida, Toru Ikeda, Noriyuki Miyazaki, Hajime Tomokage

Proc. ASME. InterPACK2009, ASME 2009 InterPACK Conference, Volume 1, 119-124, July 19–23, 2009

Paper No: InterPACK2009-89112

DOI: https://doi.org/10.1115/InterPACK2009-89112

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Topics: Simulation, Stress, Stress concentration, Physics, Diffusion (Physics), Semiconductor devices, Simulation models, Computer simulation, Electron mobility, Gates (Closures)

Proceedings Papers

Coupled Electro-Thermal Simulation of MOSFETs

Chunjian Ni, Zlatan Aksamija, Jayathi Y. Murthy, Umberto Ravaioli

Proc. ASME. InterPACK2009, ASME 2009 InterPACK Conference, Volume 1, 161-173, July 19–23, 2009

Paper No: InterPACK2009-89182

DOI: https://doi.org/10.1115/InterPACK2009-89182

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Topics: Simulation, Phonons, Electrons, Heat, Electromagnetic scattering, Radiation scattering, Scattering (Physics), Acoustics, Anisotropy, Heat conduction

Proceedings Papers

Thermal Characterization of Pulse-Activated Microelectronic Devices by Thermoreflectance-Based Surface Temperature Scanning

Pavel L. Komarov, Mihai G. Burzo, Peter E. Raad

Proc. ASME. InterPACK2005, Advances in Electronic Packaging, Parts A, B, and C, 1413-1420, July 17–22, 2005

Paper No: IPACK2005-73196

DOI: https://doi.org/10.1115/IPACK2005-73196

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Topics: Microelectronic devices, Temperature, Thermal characterization, Thermoreflectance, Reflectance, Silicon, Transients (Dynamics), MOSFET transistors, Resolution (Optics), Calibration

Proceedings Papers

Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS

Tomoyuki Hatakeyama, Kazuyoshi Fushinobu, Ken Okazaki

Proc. ASME. InterPACK2005, Advances in Electronic Packaging, Parts A, B, and C, 2073-2078, July 17–22, 2005

Paper No: IPACK2005-73151

DOI: https://doi.org/10.1115/IPACK2005-73151

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Topics: Complementary metal oxide semiconductors, MOSFET transistors, Junctions, Silicon

Proceedings Papers

Numerical Calculation of Sub-Micron Hot Spot in Si Devices

Kazuyoshi Fushinobu, Hirohisa Maruyama

Proc. ASME. InterPACK2003, 2003 International Electronic Packaging Technical Conference and Exhibition, Volume 2, 183-188, July 6–11, 2003

Paper No: IPACK2003-35079

DOI: https://doi.org/10.1115/IPACK2003-35079

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Topics: Electrons, Modeling, MOSFET transistors, Silicon, Temperature

NARROW

System and Component Level Risk Assessment for SiC MOSFET Based Inverter for Traction Application

Multi-Scale Thermal Analysis for Design of SiC-Based Medium Voltage Motor Drive

Design, Analysis and Comparison of Insulated Metal Substrates for High Power Wide-Bandgap Power Modules

3D Wire Bondless Integration: The Future of Silicon Carbide (SiC) Packaging

A Parametric Study of the Impact of Energy Relaxation Time on Thermal Behavior of Power Si MOSFET in Electro-Thermal Analysis

Arcing and Spacing Requirements for High Voltage Printed Circuit Boards

Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

Development of Plate Heat Pipes for the Thermal Management of Power Electronics

A Hierarchical Framework for Thermal Modelling of Electronic Devices: From Atoms to Chips

Device Simulation for Effects of Mechanical Stress on Electrical Performances of nMOSFETs: The Impacts of Stress-Induced Change of Intrinsic Carrier Density

Thermal Characterization of a Single MOSFET Transistor at Cryogenic Temperatures

Device Simulation of Mechanical Stress Effects on Electrical Characteristics of nMOSFETs: Impact of Local Stress in nMOSFETs

Coupled Electro-Thermal Simulation of MOSFETs

Thermal Characterization of Pulse-Activated Microelectronic Devices by Thermoreflectance-Based Surface Temperature Scanning

Effect of the Device Structure in Electro-Thermal Analysis of Si CMOS

Numerical Calculation of Sub-Micron Hot Spot in Si Devices

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