This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]
Issue Section:
Brief Notes
1.
Gross
, G.
, 1997
, “Ion Projection Lithography: Next Generation Technology?
,” J. Vac. Sci. Technol., B
15
, No. 6
, pp. 2136
–2138
.2.
Tejeda
, R.
, Engelstad
, R.
, Lovell
, E.
, and Berry
, I.
, 1998
, “Analysis, Design, and Optimization of Ion-Beam Lithography Masks
,” Proc. SPIE, Emerging Lithographic Technologies II
, 3331
, pp. 621
–628
.3.
Michell
, J. H.
, 1899
, “On the Direct Determination of Stress in an Elastic Solid, With Application to the Theory of Plates
,” Proc. London Math. Soc.
, 31
, pp. 100
–124
.4.
Timoshenko, S. P., and Goodier, J. N., 1970, Theory of Elasticity, 3rd Ed., McGraw-Hill, New York, pp. 132–135.
Copyright © 2000
by ASME
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