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Keywords: silicon
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Journal Articles
Publisher: ASME
Article Type: Research Papers
J. Appl. Mech. June 2024, 91(6): 061001.
Paper No: JAM-23-1415
Published Online: February 21, 2024
...Ayan Basu; Gaurav Singh In the present work, an atomistic scale investigation is done on crystalline silicon to understand the effect of crack depth from the loading (pulling) boundary on the critical near-tip state of stress. For various depths of embedded cracks, the near-tip stress field has...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. September 2007, 74(5): 996–1005.
Published Online: January 31, 2007
... that require neither motion of the shuttle nor high temperatures that last long enough to produce thermal degradation of the silicon (above ∼ 700 ° C for ∼ 1 min , according to Ref. 5 , as opposed to the microsecond timescale relevant to ESD). These are magnetic forces and thermal...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. September 2006, 73(5): 745–751.
Published Online: January 18, 2006
...Peter A. Gustafson; Stephen J. Harris; Ann E. O’Neill; Anthony M. Waas Micro-Raman spectroscopy is used to determine the multiaxial stress state in silicon wafers using a strategy proposed by Narayanan, et al. (J. Appl. Phys. 82, 2595–2602 (1997)) Previously, this strategy was validated when...
Topics: Silicon, Stress
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. September 2006, 73(5): 714–722.
Published Online: December 10, 2005
...I. Chasiotis; S. W. Cho; K. Jonnalagadda The fracture behavior of polycrystalline silicon in the presence of atomically sharp cracks is important in the determination of the mechanical reliability of microelectromechanical system (MEMS) components. The mode-I critical stress intensity factor...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. November 2005, 72(6): 932–935.
Published Online: October 5, 2005
... and atomic displacement distributions for an atomically sharp crack in Cu, where one observes the emission of a partial dislocation loop, and in Si, where crack front extension evolves in a kink-like fashion. 05 10 2004 05 10 2005 copper silicon elemental semiconductors cracks ductility...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. September 2004, 71(5): 672–676.
Published Online: November 9, 2004
..., Santa Barbara, CA 93106-5070, and will be accepted until four months after final publication in the paper itself in the ASME JOURNAL OF APPLIED MECHANICS . 28 August 2003 15 April 2004 09 11 2004 germanium silicon elemental semiconductors semiconductor quantum dots...
Journal Articles
Publisher: ASME
Article Type: Article
J. Appl. Mech. May 2005, 72(3): 400–407.
Published Online: October 6, 2004
... of nanostructures. 27 10 2003 06 10 2004 silicon elemental semiconductors vacancies (crystal) semiconductor thin films internal stresses elasticity stress effects impurity-vacancy interactions Surface processes such as material deposition onto a substrate, surface...
Journal Articles
Publisher: ASME
Article Type: Technical Papers
J. Appl. Mech. March 2001, 68(2): 298–303.
Published Online: October 19, 2000
... for a spherical initial curvature. The results are particularly discussed in relation to curvature measurements on Silicon substrates. Contributed by the Applied Mechanics Division of THE AMERICAN SOCIETY OF MECHANICAL ENGINEERS for publication in the ASME JOURNAL OF APPLIED MECHANICS . Manuscript...