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Keywords: thermal expansion
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Journal Articles
Article Type: Research Papers
J. Electron. Packag. September 2011, 133(3): 031012.
Published Online: September 30, 2011
... g) per column. During bonding, the Ag columns deform and conform to the Cu substrate. They are well bonded to the Cu. No molten phase is involved in the bonding process. The joints consist of pure Ag only. The ductile Ag joints are able to accommodate the thermal expansion mismatch between Si and Cu...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. June 2011, 133(2): 021003.
Published Online: June 22, 2011
... integrated circuit bonding scanning electron microscopy silicon thermal expansion solid state bonding gold electroplating microstructure silicon chip alumina substrate Even though plastic packages are popular these days, ceramic packages still play as a significant role in high...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. December 2010, 132(4): 041012.
Published Online: December 8, 2010
...). The coefficient of thermal expansion, glass transition temperature ( T g ), Young’s modulus (E), and fracture toughness were revealed by using a thermal mechanical analyzer, a dynamic mechanical analyzer, and a single-edge notch three-point bending test, while moisture absorption study was performed using an 85...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. September 2010, 132(3): 031008.
Published Online: September 9, 2010
... underfilled with one of five different materials after soldering with SnCu, SAC305, and SnPb. 17 10 2009 06 06 2010 09 09 2010 09 09 2010 adhesion copper alloys flip-chip devices lead alloys reliability solders stress analysis thermal expansion thermal shock tin alloys...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. March 2010, 132(1): 011006.
Published Online: March 19, 2010
...Hu Guojun; Andrew A. O. Tay; Luan Jing-En; Ma Yiyi The reliability of the flip chip package is strongly influenced by underfill, which has a much higher coefficient of thermal expansion (CTE) compared with other packaging materials and leads to large thermomechanical stresses developed during...
Journal Articles
Article Type: Technical Briefs
J. Electron. Packag. September 2009, 131(3): 034502.
Published Online: July 14, 2009
... for this application because it has moderate thermal conductivity and a low coefficient of thermal expansion, which is close to that of SiC. Materials that show promise for use as a diffusion barrier on Si 3 N 4 substrate for bonding SiC devices to a Si 3 N 4 substrate are refractory metals such as titanium (Ti...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. December 2008, 130(4): 041004.
Published Online: November 17, 2008
... and different coefficients of thermal expansion of each component make the package deform differently compared to the case of ATC. Traditionally, reliability assessment is conducted by ATC because ATC is believed to have a more severe thermal loading condition compared to PC, which is similar to the actual...
Journal Articles
Article Type: Design Innovations
J. Electron. Packag. December 2008, 130(4): 045001.
Published Online: November 14, 2008
... has a large mismatch in the coefficient of thermal expansion with most semiconductors, particularly with silicon. This makes it very difficult to bond large device chips to Cu substrates with a metallic joint. We thus design the Ag-cladded Cu structure to overcome this difficulty. Ag is quite soft...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. June 2008, 130(2): 021008.
Published Online: May 9, 2008
... scale cracks or interfacial adhesion flaws initiated at the short-time scale would be further propagated by the coefficient of thermal expansion induced thermal stresses at the long-time scale and result in eventual electrical disruptions. 21 02 2007 26 09 2007 09 05 2008 failure...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. March 2007, 129(1): 9–18.
Published Online: September 21, 2006
... caused by either power consumption or environmental changes, along with the resulting thermal expansion mismatch between the various packages materials result in deformation stresses in packages/assemblies especially in solder interconnects. Increased power dissipation and density in modern electronics...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. September 2006, 128(3): 208–214.
Published Online: August 26, 2005
... interconnection shows superior reliability over the DS interconnection in the thermal cycling experiment because the mismatched coefficient of thermal expansion leads to smaller stresses at the SB interconnection under the same temperature changes. On the other hand, FEA results show that the DS package has...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. June 2005, 127(2): 77–85.
Published Online: June 3, 2005
.../output density, package size reduction and higher operating speed requirements. Unfortunately, flip chip package design has a significant drawback related to the mismatch of coefficient of thermal expansion (CTE) between the silicon die and the organic substrate, which leads to premature failures...
Journal Articles
Article Type: Article
J. Electron. Packag. March 2005, 127(1): 47–51.
Published Online: March 21, 2005
.... A numerical analysis is developed to predict the residual stresses, which agree well with the experimental measurements. The changes of material properties, such as flexural modulus and coefficient of thermal expansion, of the resins with temperature are taken into account in the finite element analysis...
Journal Articles
Article Type: Technical Briefs
J. Electron. Packag. December 2004, 126(4): 560–564.
Published Online: January 24, 2005
... of underfills were manipulated to represent extremes of practical underfills. The steady-state creep model was incorporated for the eutectic solder bump to represent its real behavior. It was found from the parametric studies that the underfill with high Young’s modulus, low coefficient of thermal expansion...
Journal Articles
Article Type: Research Papers
J. Electron. Packag. September 2004, 126(3): 282–287.
Published Online: October 6, 2004
... and tested. The elastic stiffnesses of the PCB’s were determined using a coupled experimental-analytical vibration method, whereas coefficient of thermal expansions (CTE’s) and warpage were measured by placing strain-gage instrumented specimens in an environmental chamber and varying the temperature. Unit...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. June 2004, 126(2): 195–201.
Published Online: July 8, 2004
... long-term reliability, the 3D finite element method (FEM) was used to calculate the stress distribution and warpage of the whole package. Both three-point bending and cooling in the manufacturing process were taken into consideration. The LCP has a coefficient of thermal expansion (CTE) close...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. June 2004, 126(2): 237–246.
Published Online: July 8, 2004
... mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. In this paper, we report the wafer-level fabrication of an area-arrayed G-Helix...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. June 2004, 126(2): 265–270.
Published Online: July 8, 2004
... warpage are Young’s modulus, thickness, and coefficient of thermal expansion (CTE). In this paper, an experimental design and statistical methods were used to identify the model structure and parameters that are critical to the warpage of wafers. Bilinear regression models were identified based...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. March 2004, 126(1): 120–123.
Published Online: April 30, 2004
... with bonding quality at room temperature. Bonding strength increased as the annealing temperatures increased to 400 ° C , but debonding occurred at 450 ° C . The difference in thermal expansion coefficients of the glass and the Si wafer used led to this debonding. When wafers bonded at room temperature were...
Journal Articles
Article Type: Technical Papers
J. Electron. Packag. December 2003, 125(4): 602–608.
Published Online: December 15, 2003
... in the JOURNAL OF ELECTRONIC PACKAGING . Manuscript received Feb. 2003. Associate Editor: E. Suhir. 01 Feb 2003 15 12 2003 optoelectronic devices glass stress analysis boundary-value problems packaging birefringence thermal expansion internal stresses thermal stresses In most...